20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 IRF150/151/152/153 n-channel power mosfets features low ros(on) improved inductive ruggedness fast switching times ? rugged polyslllcon gate cell structure low input capacitance extended safe operating area improved high temperature reliability to-3 package (high current) product summary part number irf1 50 ihf151 irf152 ihf153 vos 100v 60v 100v 60v rosion) 0.0550 0.055q 0.080 0.08 0 id 40a 40a 33a 33a to-3 maximum ratings characteristic drain-source voltage (1) drain-gate voltage (ros= 1 .omo) (1 ) gate-source voltage continuous drain current tc~25cc continuous drain current tc-=100c drain current? pulsed (3) gate current? pulsed total power dissipation ? tc=25c derate above 25c operating and storage junction temperature range maximum lead temp, (or soldering purposes. 1/8" from case for 5 seconds symbol voss vdqr vqs lo to (dm low po tj, tstg tl IRF150 100 100 irf1s1 60 60 irf152 100 100 irf163 60 60 20 40 25 160 40 25 160 33 20 132 33 20 132 1.5 160 1.2 -55 to 150 300 unit vdc vdc vdc ado adc adc adc watts vwc ?c ?c notes: (1) tj-25''c to 150c (2) pulse test: pulse width<300ps, duty cyc!e<2% (3) repetitive rating: pulse width limited by max. junction temperature nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRF150/151/152/153 n-channel power mosfets electrical characteristics IRF150 irf162 irf1s1 irf153 all all all all irf160 irf151 irf152 irf153 IRF150 irf151 irf1 62 irf163 all all all all all all all all all all all mln 100 60 2.0 - - - - 40 33 - - 9.0 - _ ? - - ? - - - - typ -. - ? - ? - _ - - 0,04 0.06 12.3 2900 1050 450 ? - ? - 72 18 54 max -' - 4.0 100 -100 250 1000 -' - o.oss 0.06 ? 3000 1500 500 35 100 126 100 120 - - units v v v na na ma ha a a 0 0 0 pf pf pf ns ns ns ns nc nc nc test conditions voa-ov lo-250pa vds-vgs. to=250(ia vqs-20v vos=-20v vos-max. rating, vas-ov vus-max. ratingxo.b, vos-ov, tc=125''c vos>ltxon)x rds(mi) ma.. vqs= 1 0v vos=10v, i0-20a vds>l(xon)xrds(on| ">"?? to=20a vos=ov, vos=25v, f-t.omhz vdd=o.sbv(>ss, lo-zoa, zo=4,70 (mosfet switching times are essentially independent of operating temperature. ) ves-10v, id-soa, vos-o.8 max. rating (gate charge la essentially independent of operating temperature. ) thermal resistance junction-to-case case-to-sink junctlon-to- ambient rttvic r?cs rttlja all all all ? ? - ? 0.1 - 0.83 ? 30 k/w ?yw k/w mounting surface flat, smooth, and greased free air operation notes: (1) tj-26c to 150c (2) pulse test: pulse widthooops, duty cycled2% . (3) repetitive rating: pulse width limited by max. junction temperature
IRF150/151/152/153 n-channel power mosfets source-drain diode ratings and characteristics ' characteristic continuous source current (body diode) pulse source current (body diode) (3) diode forward voltage (2) reverse recovery time symbol is ism * t,, type IRF150 irf151 irf152 irf163 irf160 irf151 irf152 irf163 IRF150 irf161 irf152 irf153 all mln - - - - - - - typ ? - - - - - 600 max 40 33 160 132 2.5 2.3 - units a a a a v v ns test condition* modified mosfet symbol showing the integral reverse p-n junction rectifier ?4$ tc-25c, ls=40a, vos-ov tc=25c, is-33a, ves-ov tj=150c, lf=40a, dlf/dt=100a/|is notes: (1) tj-25c to 150c (2) pulse test: pulse widthooops, duty cycle<2% (3) repetitive rating: pulse width limited by max. junction temperature 10 20 30 40 so vos. crain-to-source voltage (volte) typical output characteristics 234667 vos, oate-7o-source voltage (volts) typical transfer characteristics 0.4 08 12 16 20 vos. draih-to-source voltabe (volts) typical saturation characterljllcs 1 10 t 'jpfl ish iff8! l ?; a. ., ? >*-,jpui , ""7 !! ? . . i . ? ik v srr- ? uratkm lkjtlob l_u_ll v^' \3 jj ? 'j^h - ^ ' 10m - looms ?'dc' iwi60 2 1.0 2 5 10 20 50 100 200 600 1000 vgj. drain-to-source voltaoe (volts) maximum sat* operating aim
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